PHB,PHD66NQ03LT دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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PHB,PHD66NQ03LT
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حجم فایل
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93.022
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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13
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مشخصات فنی
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Manufacturer:
NXP USA Inc.
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Series:
TrenchMOS™
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Packaging:
Tape & Reel (TR)
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Part Status:
Obsolete
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
25V
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Current - Continuous Drain (Id) @ 25°C:
66A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
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Rds On (Max) @ Id, Vgs:
10.5mOhm @ 25A, 10V
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Vgs(th) (Max) @ Id:
2V @ 1mA
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Gate Charge (Qg) (Max) @ Vgs:
12nC @ 5V
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Vgs (Max):
±20V
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Input Capacitance (Ciss) (Max) @ Vds:
860pF @ 25V
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FET Feature:
-
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Power Dissipation (Max):
93W (Tc)
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Operating Temperature:
-55°C ~ 175°C (TJ)
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Mounting Type:
Surface Mount
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Supplier Device Package:
DPAK
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Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
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Base Part Number:
PHD66
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detail:
N-Channel 25V 66A (Tc) 93W (Tc) Surface Mount DPAK
